Fdp6670al datasheetpdf 1 page fairchild semiconductor. Wesner pages 2 of 2 variations may apply due to materials and productions tolerances. Nchannel trenchmos transistor php55n03lt, phb55n03lt logic. The objective of this differences training is to get the field familiar and experienced with the new cam software. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Safety notices for sun storagetek 6000 series arrays, ec14331e3, third edition. For those who only need the ability to read linear and 2d bar codes, the voyager 1450g is the perfect fit. Wesner pages 1 of 2 identification type designation lr3 48 3160 type of reactor 3 line reactor series lr3 core rating 3995. Thermal data parameter symbol rating unit junction to case to126 to126c. The information in this data sheet is based on data considered accurate. It explains the past product names, and introduces the reader to the new product names and terminology. The datasheet is printed for reference information only. Santricity storage manager installation guide for version 9. Nchannel logic level powertrenchtm mosfet datasheet catalog. Recent listings manufacturer directory get instant insight into any electronic component. E series female panel mount connectors the e series offers a panel mount with quick release inserts.
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Bd 811 bt3904 bf5484 mbd6050 bta 36 2sa 2222a bf5457 bfs88 mmbc2107 text. August 2003 fdp6030lfdb6030l nchannel logic level powertrench mosfet general description features this nchannel logic level mosfet has been 48 a, 30 v rdson m. Thermal characteristics characteristic symbol max unit. Disconnects 600 vac heavyduty, fusible, single throw speci. Storage temperature range total power dissipation 2 w55 to 150 c operating junction temperature range 55 to 150 c linear derating factor 0. Suitable for service entrance use, except 1200 ampere on 480y277 or 600y347 grounded wye systems, per nec 21510 and 23095, and 4pole switches.
Chip,iconline,databook,datasheet catalog,datasheet archive. Nas alarm trigger intrusion detection, motion detection, dynamic analysis, tampering alarm, network. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. C3205 datasheet, c3205 pdf, c3205 data sheet, datasheet, data sheet, pdf. Fdp6670alfdb6670al nchannel logic level powertrench mosfet. Operating and storage junction temperature range tj, tstg. May 2003 fdp6670al fdb6670al nchannel logic level powertrench mosfet general description features this nchannel logic level mosfet has been 80 a, 30 v rdson 6. July 1998 fdp6670alfdb6670al nchannel logic level powertrenchtm mosfet general description features this nchannel logic level mosfet has been designed 80 a, 30 v. Storagetek 6540 array product library documentation. Absolute maximum ratings are those values beyond which the device could be permanently damaged. The male and female e series fit into the same panel cutouts. Pure storage flasharrayx, the worlds first 100% allflash endtoend nvme and nvmeof array, now optionally includes a storage class memory boost to address the most demanding enterprise applications performance requirements. Fdp6670al fdb6670al nchannel logic level powertrenchtm mosfet.
Fairchild, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. July 1998 fdp6670al fdb6670al nchannel logic level powertrenchtm mosfet general description features this nchannel logic level mosfet has been designed 80 a, 30 v. Fdb6670al pdf, fdb6670al description, fdb6670al datasheets. Fdp6670al datasheet pdf 1 page fairchild semiconductor. Phb66nq03lt nchannel trenchmos logic level fet rev. Fdb6670al datasheet nchannel logic level powertrench. Fdp6670alfdb6670al nchannel logic level powertrenchtm mosfet. G211084 dimensional drawings interbase dbs72x interbase dbs72x with blanking plate bp720 5 1. Incorporates two highpower fets with low on resistance for large currents that employ highpower packages, thus driving large current loads while suppressing the generation of heat.
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